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GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 Customer can consider the following
GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 Customer can consider the following
$457.12
Description
Customer can consider the following BST8-12
The amorphous structure ( no orientation)
Thickness 16 +/- 1
Thickness: 0
Coating thickness: ~143 um
GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 Customer can consider the followingGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 270+ 30 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Resistivity
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