GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox 3 Pressure

3  Pressure

5% at 120 Celcius degrees / 1 H

Laptop Computer Brand new laptop ( 4GB RAM 128GB SSD) with MS Windows 10and the latest version testing software is installed and calibrated for immediate use

and spring steel etc

998 alumina tube can be used at operating temperatures to 1750 oC in both oxidizing and reducing atmospheres

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox 3 PressureGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces