GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US Max. current +3 A (4'' to 2'')

(4'' to 2'')

Graphene film structure: three film

We don't guarantee the crimping quality if other brand cells are used

< 5 x10-5  at C axis

5 mm without coating)

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US Max. current +3 A (4'' to 2'')GaAs single crystal wafer, PRIME Grade Growing Method: VGF Orientation: (100) 2 degree OFF Toward [101] + 0. 5 deg Size: 2" dia x 0. 5mm Polishing: One side polished Doping: Te doped Conductor type: N type Carrier Concentration: (0. 15 2. 6) E18 cm^3 Mobility: 2700~3600 cm^2 V. S Resistivity: 9E 4~1. 1E 2 ohm cm EPD: <8000 cm^2 Note: EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces