GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders One pack of 48173 accessories

One pack of 48173 accessories

5 ×10-4 S/cm at 25 Room Temperature

Resistivity:                     10-15  Ohm

998 alumina tube proves inert to carbon and refractory metals in many severe situations:

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GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders One pack of 48173 accessoriesGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5