Ge Substrate (110) 10x5x 0.5 mm, 2 SP, N-type Undoped ,R>50 ohm.cm Al (Aluminum) Type: N/ P doped

Type:           N/ P doped

Wafer size: 100 mm dia x 0

5Mpa (the cap will open to release high pressure inside if over 2

D 7/8" 3 pcs 4 Pushing Rod Handwheel 1 pc 5 Hydraulic pressing oil 1 bottle 6 Socket Head Screw Driver 1 pc

Crystal structure: Orthorhombic

Ge Substrate (110) 10x5x 0.5 mm, 2 SP, N-type Undoped ,R>50 ohm.cm Al (Aluminum) Type: N/ P dopedSpecifications Growing Method: CZ Wafer Size: 10x5x0. 5 mm Surface Polishing: two sides optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater