1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystallineSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystalline"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystallineSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystalline"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystallineSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystalline – itdarmstadt.de

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Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystalline

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1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystalline">
Description

Thickness of highly oriented polycrystalline Cu <111> film: 400 nm

Dimension: 6 mm (0

Size: 34 mm Diameter  x 0

Size:          10x10x 0

ID: 230 mm (see photo below)

Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Thickness of highly oriented polycrystallineSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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