GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA text-justify:inter-ideograph

text-justify:inter-ideograph

Cutting / Dicing Saws

Each channel can set different working modes and functions independently

0 g /m^2 ± 0

8682 g/mol

GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA text-justify:inter-ideographGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: M axis (10 10) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 5 mm x 10 mm +